| specification | Working temperature | Packaging | Working voltage | The output current | Function description | Available |
|---|---|---|---|---|---|---|
| HEX1881 | -40-150℃ | TO-92/SOT-23 | 2.5-24V | 4-8mA | High temperature resistant | 10000 |
| HEX34EW | -40~150°C | SOT23?/?TO-92 | 3.8-40V | 10mA | Unipolar hall switch | 10000 |
| XMC1000 | -40~105°C | TSSOP-16/TSSOP-28/TSSOP-38 | 1.8V-5.5V | 32 bit MCU Microcontrollers | 1000 | |
| STM32F030K6T6 | -40℃-85℃ | 32-LQFP | 2.4V-3.6V | Integrated circuit IC processor of ARM microprocessor | 10000 | |
| STM32F302C8T6 | -40℃-85℃ | LQFP-48 | 2V-3.6V | -25-25mA | 32 bit Singlechip | 10000 |
| STM8S003F3P6 | -40°C-80°C | TSSOP20 | 2.95V-5.35V | 1.3mA | 8 bit flash microcontroller, with up to 128kB flash memory, internal RAM | 10000 |
| SMA6823MH | -20~100°C | SIP | 20V | 2.5A | motor drive | 10000 |
| FF600R12IE4 | -40℃-150℃ | IGBT | 1200V | 600-1200A | Insulated gate bipolar transistor IGBT module, emitter control diode | 10000 |
| FF600R12ME4 | -40℃-150℃ | IGBT | 1200V | 600-1200A | Insulated gate bipolar transistor IGBT module | 10000 |
| US30KB80R | -55℃-150℃ | Bulk | 800V | 1000A | Single-phase bridge rectifier diode | 5000 |
| IPP037N08N3?G | -55℃-175℃ | PG-TO220-3 | 80V | 100A | Discrete semiconductor, N channel power transistor | 10000 |
| BSC030P03NS3?G | -55℃-150℃ | PG-TDSON-8 | 6-10V | 25.4A | Discrete semiconductor, P channel power transistor | 100000 |
| VIPER27LD | -40~150°C | 16-SOIC | 8.5?V?~?23.5?V | 25mA | VIPER27LD off-line high voltage converter, power converter | 10000 |
| STM32F301K8U6 | -40~85°C | UFQFPN32 | 2-3.6V | 20mA | Analog and DSP with FPU ARM Cortex-M4 MCU with 64 Kbytes Flash, 72 MHz CPU, CCM, 12-bit ADC 5 MSPS, Comparator, Op-Amp | 10000 |
| STM8S103F3P6 | -40~105°C | TSSOP20 | 5.5V | 25mA | Mainstream Access line 8-bit MCU with 8 Kbytes Flash, 16 MHz CPU, integrated EEPROM | 10000 |
